Penumbuhan Lapisan Tipis Silikon Amorf Terhidrogenasi dengan Sistem Hot Wire PECVD

Abstract

Hydrogenated amorphous silicon (a-Si:H) thin film was grown on the Corning glass-7059 substrate by using hot wire plasma enhanced chemical vapor deposition (HW-PECVD) system. 10% Silane (SiH₄)  gas diluted in hydrogen (H₂) was used as gas sources. Compared with the deposition rate of conventional HW-PECVD system (0.23 Å/s), the deposition rate of HW-PECVD is higher which varies from 0.86 to 0.42 Å/s for filament temperature from 500 ^oC to 1000 ^oC at the gas flow rate of 70 sccm. The optical band gap increases from 1.87 eV to 2.18 eV for filament temperature from 500 to 1000 ^oC at the gas flow rate of 70 sccm. The dark conductivity is highest (1.59x10^-11 S/cm) of the film grown at 800 ^oC filament temperature.